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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD847 DESCRIPTION *With TO-3PN package *High collector current *Wide area of safe operation *Complement to type 2SB757 APPLICATIONS *Audio amplifications *Serie regulators *General purpose power amplifiers PINNING PIN 1 2 3 Base Emitter Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 40 40 5 15 5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1mA; IE=0 IC=10mA; IB=0 IE=0.1mA; IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=40V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=2V 40 MIN 40 40 5 2SD847 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE TYP. MAX UNIT V V V 0.8 1.0 10 100 240 V V A A Switching times ton ts tf Turn-on time Storage time Fall time IC=15A;IB1=-IB2=1.5A RL=2@;PW=20s,DutyB2% 1.0 2.0 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD847 Fig.2 outline dimensions 3 |
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